High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid as source

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 2001, Pages 334-335

  Wei, J ^a   Xia, F ^a   Li, C ^a   Forrest, S R ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ETCHING; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

QUANTUM WELL LASERS;

EID: 0035655063     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Static and dynamic characterization of 1.29 μm GaInNAs ridge-waveguide laser didoes
2. Low-threshold current, high-efficiency 1.3 μm wavelength aluminum-free InGaAsN based quantum well lasers
3. Gas source molecular beam epitaxy grown InGaAs(P)N/InP long-wavelength (λ > 1.65 μm) photodetectors using a solid arsenic source