High-temperature characteristic in 1.3-μm-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1560-1562

  Sato, Shunichi ^a   Satoh, Shiro ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

RIDGE STRIPE LASERS;

QUANTUM WELL LASERS;

EID: 0033349691     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806846     Document Type: Article

References (17)

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