Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5711-5713

  Kondow, Masahiko ^a   Nakatsuka, Shin'ichi ^a   Kitatani, Takeshi ^a   Yazawa, Yoshiaki ^a   Okai, Makoto ^a  

^a HITACHI LTD   (Japan)

Author keywords

GaInNAs; High temperature performance; Long wavelength range laser diode; Room temperature pulsed operation

Indexed keywords

HIGH TEMPERATURE PERFORMANCE; LONG WAVELENGTH RANGE LASER DIODE; QUANTUM SIZE EFFECT; ROOM TEMPERATURE PULSED OPERATION;

CARRIER CONCENTRATION; CRYSTAL GROWTH; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); FABRICATION; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PERFORMANCE; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR LASERS;

EID: 0030286954     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5711     Document Type: Article

References (4)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki and Y. Yazawa: Jpn. J. Appl. Phys. 35 (1996) 1273.
2. K. Nakahara, M. Kondow, T. Kitatani, Y. Yazawa and K. Uomi: Electron. Lett. 32 (1996) 1585
3. M. Kondow, T. Kitatani, Y. Yazawa and M. Okai: Proc. MRS-J Symp. R, ed. H. Oyanagi (Chiba, 1996) p. 42.
4. M. Möhrle, H. Düser and H. Venghaus: IEEE J. Quantum Electron. 27 (1991) 1804.