Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1272-1275

  Mars, D E ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24644467409     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590738     Document Type: Article

References (18)

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