Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 563-566

  Plaine, G ^a   Asplund, C ^a   Sundgren, P ^a   Mogg, S ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

EDGE-EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0034843238     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
2. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3μm
3. Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature
4. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
5. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38μm
6. Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface emitting lasers grown by metalorganic chemical vapour deposition