MOCVD growth of InAsN for infrared applications

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 319-321

  Naoi, Hiroyuki ^a   Naoi, Yoshiki ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION;

GAS PHASE RATIO;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031078861     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00236-5     Document Type: Article

References (5)

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2. J. N. Baillargeon, K. Y. Cheng, G. E. Hofler, P. J. Pearah and K. C. Hsieh, Appl. Phys. Lett. 60, 2540 (1992).
3. S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito, Ext. Abst. 40th Spring Meeting, p. 347. Japanese Society of Applied Physics and Related Societies, No. 1 (1993) (in Japanese).
4. M. Weyers and M. Sato, Appl. Phys. Lett. 62, 1396 (1993).
5. S. V. Novicov, C. T. Foxon, T. S. Cheng, T. L. Tansley, J. W. Orton, D. E. Lacklison, D. Johnston, N. Baba-Ali, S. E. Hooper, L. C. Jenkins and L. Eaves, J. Cryst. Growth 146, 340 (1995).