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Volumn 11, Issue 10, 1999, Pages 1205-1207

1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPONTANEOUS EMISSION; STIMULATED EMISSION;

EID: 0033204524     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.789692     Document Type: Article
Times cited : (164)

References (11)
  • 1
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    • Y. Arakawa and H. Sakaki, "Multidimentional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 939-941
    • Arakawa, Y.1    Sakaki, H.2
  • 2
    • 84892274867 scopus 로고
    • Gain and the threshold of three-dimensional quantum-box lasers
    • M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE J. Quantum Electron., vol. QE-22, pp. 1915-1921, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1915-1921
    • Asada, M.1    Miyamoto, Y.2    Suematsu, Y.3
  • 3
    • 0032490759 scopus 로고    scopus 로고
    • Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
    • K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Ohtsubo, N. Yokoyama, and H. Ishikawa, "Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots," Electron. Lett., vol. 34, pp. 1588-1560, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 1588-11560
    • Mukai, K.1    Nakata, Y.2    Shoji, H.3    Sugawara, M.4    Ohtsubo, K.5    Yokoyama, N.6    Ishikawa, H.7
  • 5
    • 11644290330 scopus 로고    scopus 로고
    • Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
    • D. L. Huffaker and D. G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl Phys. Lett., vol. 73, pp. 520-522, 1998.
    • (1998) Appl Phys. Lett. , vol.73 , pp. 520-522
    • Huffaker, D.L.1    Deppe, D.G.2
  • 10
    • 0033100686 scopus 로고    scopus 로고
    • Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
    • G. Park, D. L. Huffaker, Z. Zou, O. B. Shckekin, and D. G. Deppe, "Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 301-303, 1999.
    • (1999) IEEE Photon. Technol. Lett. , vol.11 , pp. 301-303
    • Park, G.1    Huffaker, D.L.2    Zou, Z.3    Shckekin, O.B.4    Deppe, D.G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.