Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 67-72

  Miyamoto, Tomoyuki ^a   Takeuchi, Kanji ^a   Kageyama, Takeo ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Absorption spectrum; Band offset; CBE; GaInNAs; Miscibility gap; Quantum well

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; ENERGY GAP; LIGHT ABSORPTION; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

BAND OFFSET; MISCIBILITY GAP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033080194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00941-5     Document Type: Article

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