Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

Electronics Letters

Volumn 36, Issue 24, 2000, Pages 2018-2019

  Sato, S ^a   Nishiyama, N ^a   Miyamoto, T ^a   Takahashi, T ^a   Jikutani, N ^a   Arai, M ^a   Matsutani, A ^a   Koyama, F ^a   Iga, K ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE OPERATIONS; LASER RESONATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE;

THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0034314540     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001430     Document Type: Article

References (9)

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