Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers

IEEE Photonics Technology Letters

Volumn 11, Issue 3, 1999, Pages 301-303

  Park, G ^a   Huffaker, D L ^a   Zou, Z ^a   Shchekin, O B ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Laser measurements; Lasers; Quantum dots; Semiconductor lasers; Spontaneous emission

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0033100686     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.748215     Document Type: Article

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