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Volumn 11, Issue 3, 1999, Pages 301-303

Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers

Author keywords

Laser measurements; Lasers; Quantum dots; Semiconductor lasers; Spontaneous emission

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

EID: 0033100686     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.748215     Document Type: Article
Times cited : (108)

References (13)
  • 3
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    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 965-967
    • Xie, Q.1    Kalburge, A.2    Chen, P.3    Madhukar, A.4
  • 5
    • 0030217389 scopus 로고    scopus 로고
    • Room temperature lasing from InGaAs quantum dots
    • R. Mirin, A. Gossard, and J. Bowers, "Room temperature lasing from InGaAs quantum dots," Electron. Lett., vol. 32, pp. 1732-1734, 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 1732-1734
    • Mirin, R.1    Gossard, A.2    Bowers, J.3
  • 8
    • 11644290330 scopus 로고    scopus 로고
    • Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
    • D. L. Huffaker and D. G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 73, pp. 520-522, 1998.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 520-522
    • Huffaker, D.L.1    Deppe, D.G.2
  • 9
    • 0031996455 scopus 로고    scopus 로고
    • 1.15 μm wavelength oxide-confined quantum dot vertical-cavity surface-emitting laser
    • D. L. Huffaker, H. Deng, and D. G. Deppe, "1.15 μm wavelength oxide-confined quantum dot vertical-cavity surface-emitting laser," IEEE Photon. Technol. Lett., vol. 10, pp. 185-187, 1998.
    • (1998) IEEE Photon. Technol. Lett. , vol.10 , pp. 185-187
    • Huffaker, D.L.1    Deng, H.2    Deppe, D.G.3
  • 10
    • 0031186313 scopus 로고    scopus 로고
    • Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength
    • J. C. Campbell, D. L. Huffaker, H. Deng, and D. G. Deppe, "Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength," Electron. Lett., vol. 33, pp. 1337-1338, 1997.
    • (1997) Electron. Lett. , vol.33 , pp. 1337-1338
    • Campbell, J.C.1    Huffaker, D.L.2    Deng, H.3    Deppe, D.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.