-
1
-
-
0029487410
-
0.5,As quantum dots by current injection
-
0.5,As quantum dots by current injection," IEEE Photon. Technol Lett., vol. 7, pp. 1385-1387, 1995.
-
(1995)
IEEE Photon. Technol Lett.
, vol.7
, pp. 1385-1387
-
-
Shoji, H.1
Mukai, K.2
Ohtsuka, N.3
Sugawara, M.4
Uchida, T.5
Ischikawa, H.6
-
2
-
-
0001587280
-
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
-
N. N. Ledentsov, V. A. Shchukin, M. Grundmann, N. Kirstaedter, J. Bohrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, P. S. Kop'ev, S. V. Zaitsev, N. Yu. Gordeev, Zh. I. Alferov, A. I. Borovkov, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gosele, and J. Heydenreich, "Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth," Phys. Rev. B, vol. 54, pp. 8743-8750, 1996.
-
(1996)
Phys. Rev. B
, vol.54
, pp. 8743-8750
-
-
Ledentsov, N.N.1
Shchukin, V.A.2
Grundmann, M.3
Kirstaedter, N.4
Bohrer, J.5
Schmidt, O.6
Bimberg, D.7
Ustinov, V.M.8
Egorov, A.Y.9
Zhukov, A.E.10
Kop'ev, P.S.11
Zaitsev, S.V.12
Gordeev, N.Yu.13
Alferov, Zh.I.14
Borovkov, A.I.15
Kosogov, A.O.16
Ruvimov, S.S.17
Werner, P.18
Gosele, U.19
Heydenreich, J.20
more..
-
3
-
-
0030215909
-
Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
-
Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, "Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)," IEEE Photon. Technol. Lett., vol. 8, pp. 965-967, 1996.
-
(1996)
IEEE Photon. Technol. Lett.
, vol.8
, pp. 965-967
-
-
Xie, Q.1
Kalburge, A.2
Chen, P.3
Madhukar, A.4
-
4
-
-
0030188718
-
0.6As/GaAs self-organized quantum dot lasers
-
0.6As/GaAs self-organized quantum dot lasers," Electron. Lett., vol. 32, pp. 1374-1375, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1374-1375
-
-
Kamath, K.1
Bhattacharya, P.2
Sosnowski, T.3
Norris, T.4
Phillips, J.5
-
5
-
-
0030217389
-
Room temperature lasing from InGaAs quantum dots
-
R. Mirin, A. Gossard, and J. Bowers, "Room temperature lasing from InGaAs quantum dots," Electron. Lett., vol. 32, pp. 1732-1734, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1732-1734
-
-
Mirin, R.1
Gossard, A.2
Bowers, J.3
-
7
-
-
0029509799
-
1.3 μm photoluminescence from InGaAs quantum dots
-
R. Mirin, J. Ibbetson, K. Nishi, A. Gossard, and J. Bowers, "1.3 μm photoluminescence from InGaAs quantum dots," Appl. Phys. Lett., vol. 67, pp. 3795-3797, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3795-3797
-
-
Mirin, R.1
Ibbetson, J.2
Nishi, K.3
Gossard, A.4
Bowers, J.5
-
8
-
-
11644290330
-
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
-
D. L. Huffaker and D. G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 73, pp. 520-522, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 520-522
-
-
Huffaker, D.L.1
Deppe, D.G.2
-
9
-
-
0031996455
-
1.15 μm wavelength oxide-confined quantum dot vertical-cavity surface-emitting laser
-
D. L. Huffaker, H. Deng, and D. G. Deppe, "1.15 μm wavelength oxide-confined quantum dot vertical-cavity surface-emitting laser," IEEE Photon. Technol. Lett., vol. 10, pp. 185-187, 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 185-187
-
-
Huffaker, D.L.1
Deng, H.2
Deppe, D.G.3
-
10
-
-
0031186313
-
Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength
-
J. C. Campbell, D. L. Huffaker, H. Deng, and D. G. Deppe, "Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength," Electron. Lett., vol. 33, pp. 1337-1338, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 1337-1338
-
-
Campbell, J.C.1
Huffaker, D.L.2
Deng, H.3
Deppe, D.G.4
-
11
-
-
21944454760
-
1.3 μm room-temperature GaAs-based quantum-dot laser
-
Nov. 2
-
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, no. 18, Nov. 2, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, Issue.18
-
-
Huffaker, D.L.1
Park, G.2
Zou, Z.3
Shchekin, O.B.4
Deppe, D.G.5
-
12
-
-
0030568668
-
Prevention of gain saturation by multi-layer quantum dot laser
-
O. G. Schmidt, N. Kirstaedter, N. N. Ledentsov, M.-H. Mao, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop'ev, and Zh. I. Alferov, "Prevention of gain saturation by multi-layer quantum dot laser," Electron. Lett., vol. 32, pp. 1302-1303, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1302-1303
-
-
Schmidt, O.G.1
Kirstaedter, N.2
Ledentsov, N.N.3
Mao, M.-H.4
Bimberg, D.5
Ustinov, V.M.6
Yu Egorov, A.7
Zhukov, A.E.8
Maximov, M.V.9
Kop'ev, P.S.10
Alferov, Zh.I.11
-
13
-
-
0000961778
-
Negative characteristic temperature of InGaAs quantum dot injection laser
-
A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsulnikov, N. N. Ledentsov, S. V. Zaitsev, N. Yu. Gordeev, P. S. Kopev, and Z. I. Alferov, "Negative characteristic temperature of InGaAs quantum dot injection laser," Jpn. J. Appl. Phys., vol. 37, pp. 4216-4218, 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.37
, pp. 4216-4218
-
-
Zhukov, A.E.1
Ustinov, V.M.2
Egorov, A.Yu.3
Kovsh, A.R.4
Tsatsulnikov, A.F.5
Ledentsov, N.N.6
Zaitsev, S.V.7
Gordeev, N.Yu.8
Kopev, P.S.9
Alferov, Z.I.10
|