Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 93-99

  Nakata, Y ^a   Mukai, K ^a   Sugawara, M ^a   Ohtsubo, K ^a   Ishikawa, H ^a   Yokoyama, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CURRENTS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033883321     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00466-2     Document Type: Article

References (28)

1. Arakawa Y., Sakaki H. Appl. Phys. Lett. 40:1982;939.
2. Sakaki H. Jpn. J. Appl. Phys. 28:1989;L134.
3. Petroff P.M., Gossard A.C., Logan R.A., Wiedmann W. Appl. Phys. Lett. 41:1982;635.
4. Reed M.A., Bate R.T., Bradshow K., Duncan W.M., Frenseley W.R., Lee J.W., Shih H.D. J. Vac. Sci. Technol. B. 4:1986;358.
5. Petroff P.M., Gossard A.C., Wiegmann W. Appl. Phys. Lett. 45:1984;620.
6. Fukui T., Saito H. Appl. Phys. Lett. 50:1987;824.
7. Fukui T., Ando S., Tokura Y., Toriyama T. Appl. Phys. Lett. 58:1991;2018.
8. Madhukar A., Rajkumar K.C., Chen P. Appl. Phys. Lett. 62:1993;1547.
9. Stranski I.N., Krastanow L. Akad. Wiss. (IIb). 146:1937;797.
10. Tabuchi M., Noda S., Sasaki A. Sci. Technol. Mesoscopic Struct. 1992;379.
11. Leonard D., Krishnamurthy M., Reaves C.M., Denbaars S.P., Petroff P.M. Appl. Phys. Lett. 63:1993;3203.
12. Guha S., Madhukar A., Rajkumar K.C. Appl. Phys. Lett. 57:1990;2110.
13. Kirstaedter N., Ledentsov N.N., Grundmann M., Bimberg D., Ustinov V.M., Ruvimov S.S., Maximov M.V., Kop'ev P.S., Alferov Zh.I., Richter U., Werner P., Gosele U., Heydenreich J. Electron. Lett. 30:1994;1416.
14. Kamath K., Bhattacharya P., Sosnowski T., Norris T., Phillips J. Electron. Lett. 32:1996;1374.
15. Shoji H., Nakata Y., Mukai K., Sugiyama Y., Sugawara M., Yokoyama N., Ishikawa H. Electron. Lett. 32:1996;2023.
16. Ledentsov N.N., Bohrer J., Bimberg D., Kochnev I.V., Maximov M.V., Kop'ev P.S., Alferov Zh.I., Kosogov A.O., Ruvimov S.S., Werner P., Gosele U. Appl. Phys. Lett. 69:1996;1095.
17. Solomon G.S., Trezza J.A., Marshall A.F., Harris J.S. Jr. Phys. Rev. Lett. 76:1996;952.
18. Xie Q., Kobayashi N.P., Ramachandran T.R., Kalburge A., Chen P., Madhukar A. J. Vac. Sci. Technol. B. 14:1996;2203.
19. Nakata Y., Sugiyama Y., Futatsugi T., Yokoyama N. J. Crystal Growth. 175/176:1997;713.
20. Y. Nakata, Y. Sugiyama, K. Mukai, T. Futatsugi, H. Shoji, M. Sugawara, H. Ishikawa, N. Yokoyama, Inst. Phys. Conf. Ser. No. 162, Chapter 9, 1999, p. 427.
21. Mukai K., Nakata Y., Shoji H., Sugawara M., Ohtsubo K., Yokoyama N., Ishikawa H. Electron. Lett. 34:1998;1588.
22. Mirin R.P., Ibbetson J.P., Bowers J.E., Gossard A.C. J. Crystal Growth. 175/176:1997;696.
23. Huffaker D.L., Deppe D.G. Appl. Phys. Lett. 73:1998;520.
24. Mukai K., Ohtsuka N., Sugawara M., Yamazaki S. Jpn. J. Appl. Phys. Part 2. 33:1994;L1710.
25. Murray R., Childs D., Malik S., Siverns P., Roberts C., Hartmann J.M., Stavrinou P. Jpn. J. Appl. Phys. 38:1999;528.
26. Gerard J.M., Lemaitre A., Legrand B., Ponchet A., Gayral B., Thierry-Mieg V. J. Crystal Growth. 201/202:1999;1109.
27. Nishi K., Saito H., Sugo S., Lee J.S. Appl. Phys. Lett. 74:1999;1111.
28. Nabetani Y., Ishikawa T., Noda S., Sasaki A. J. Appl. Phys. 76:1994;347.