InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4221-4223

  Maximov, Mikhail V ^a   Kochnev, Igor V ^a   Shernyakov, Yuri M ^a   Zaitsev, Sergei V ^a   Gordeev, Nikita Yu ^a   Tsatsul'nikov, Andrew F ^a   Sakharov, Alexey V ^a   Krestnikov, Igor L ^a   Kop'ev, Petr S ^a   Alferov, Zhores I ^a   Ledentsov, Nikolai N ^a,d   Bimberg, Dieter ^b   Kosogov, Alexander O ^a,d   Werner, Peter ^c   Gösele, Ulrich ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d Physical Technical Institute

Author keywords

InGaAs GaAs; Laser; MOCVD; Quantum dots (QDs); Ultrahigh temperature stability

Indexed keywords

EID: 0000448612     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4221     Document Type: Article

References (6)

1. Y. Arakawa and H. Sakaki: Appl. Phys. Lett. 40 (1982) 939.
2. L. V. Asryan and R. A. Suris: Semicond. Sci. & Technol. 4 (1996) 554.
3. N. N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Shmidt, R. Heitz, J. Böhrer, D. Bimberg, V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, A. O. Kosogov, P. Werner, U. Richter, U. Gösele and J. Heydenreich: Proc. 7th Int. Conf. Modulated Semiconductor Structures, Madrid, Spain, June 1995, Solid State Electron. 40 (1996) 785.
4. Zh. I. Alferov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, V. V. Komin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maximov, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul'nikov and Yu. M. Shernyakov: Sov. Phys.-Semicond. 30 (1996) 197.
5. N. N. Ledentsov, J. Böhrer, D. Bimberg, I. V. Kochnev, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, A. O. Kosogov, S. S. Ruvimov, P. Werner and U. Gösele: Appl. Phys. Lett. 69 (1996) 1095.
6. A. O. Kosogov, P. Werner, U. Gösele, N. N. Ledentsov, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, N. A. Bert and Zh. I. Alferov: Appl. Phys. Lett. 69 (1996) 3072.