Low-threshold lasing from high-density InAs quantum dots of uniform size

Electronics Letters

Volumn 35, Issue 18, 1999, Pages 1561-1563

  Saito, H ^a   Nishi, K ^a   Sugimoto, Y ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

FABRY-PEROT LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0033363114     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991077     Document Type: Article

References (6)