Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 225-226

  Kageyama, T ^a   Miyamoto, T ^a   Makino, S ^a   Ikenaga, Y ^a   Nishiyama, N ^a   Matsutani, A ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PHOTOLUMINESCENCE; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 6644226852     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010179     Document Type: Article

References (15)

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