Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5023-5027

  Schlenker, Dietmar ^a   Pan, Zhong ^b   Miyamoto, Tomoyuki ^a   Koyama, Fumio ^b   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AFM; Island growth; MOCVD; Quantum well; Strain; Surface quality; Threading dislocation

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN;

BUFFER LAYERS; ISLAND GROWTH;

QUANTUM WELL LASERS;

EID: 0033354353     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5023     Document Type: Article

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