SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium-Proceedings

Volumn 622, Issue , 2000, Pages T221-T2213

Insulator/GaN heterostructures of low interfacial density of states

(14) Hong, M a Ng, H M a Kwo, J a Kortan, A R a Baillargeon, J N a Anselm, K A a Mannaerts, J P a Cho, A Y a Lee, C M b Chyi, J I b Lay, T S c Ren, F d Abernathy, C R d Pearton, S J d

a LUCENT TECHNOLOGIES (United States)

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

d UNIVERSITY OF FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DENSITY (SPECIFIC GRAVITY); DEPOSITION; GALLIUM NITRIDE; HYSTERESIS; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; MOS DEVICES; SEMICONDUCTOR DIODES;

CAPACITANCE-VOLTAGE CURVES;

HETEROJUNCTIONS;

EID: 0034429065 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-622-t2.2.1 Document Type: Article

Times cited : (8)

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