Recessed gate GaN field effect transistor

Solid-State Electronics

Volumn 41, Issue 11, 1997, Pages 1819-1820

  Ren, F ^b   Lothian, J R ^b   Chen, Y K ^b   Karlicek Jr , R F ^b   Tran, L ^b   Schurmann, M ^b   Stall, R A ^b   Lee, J W ^a   Pearton, S J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; ETCHING; FABRICATION; GATES (TRANSISTOR); MESFET DEVICES; NITROGEN COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSISTORS;

HIGH POWER/HIGH TEMPERATURE ELECTRONIC DEVICES;

SOLID STATE DEVICES;

EID: 0001584908     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00140-8     Document Type: Article

References (9)

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