Gate length scaling for Al0.2Ga0.8N/GaN HJFETs: Two-dimensional full band monte carlo simulation including polarization effect

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1965-1972

  Ando, Yuji ^a,b   Contrata, Walter ^a   Samoto, Norihiko ^a   Miyamoto, Hironobu ^a   Matsunaga, Kohji ^a   Kuzuhara, Masaaki ^a   Kunihiro, Kazuaki ^b   Kasahara, Kensuke ^a   Nakayama, Tatsuo ^a   Takahashi, Yuji ^a   Hayama, Nobuyuki ^a   Ohno, Yasuo ^a  

^a IEEE   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Algan; Gan; HJFET; Monte carlo method

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; MONTE CARLO METHODS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM NITRIDE; CARRIER CONFINEMENT; GALLIUM NITRIDE; HJFET; PIEZOELECTRIC POLARIZATION EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0034293825     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870582     Document Type: Article

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