Transient electron transport in wurtzite GaN, InN, and AIN

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7727-7734

  Foutz, Brian E ^a   O'Leary, Stephen K ^b   Shur, Michael S ^c   Eastman, Lester F ^a  

^a Cornell University   (United States)

^b UNIVERSITY OF REGINA   (Canada)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE; WURTZITE;

NITRIDES;

EID: 0032615133     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370577     Document Type: Article

References (67)

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. S. N. Mohammad and H. Morkoç, Prog. Quantum Electron. 20, 361 (1996).
3. S. Nakamura, Mater. Res. Bull. 22(2), 29 (1997).
4. M. S. Shur and M. A. Khan, Mater. Res. Bull. 22(2), 44 (1997).
5. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, Appl. Phys. Lett. 26, 625 (1975).
6. D. K. Ferry, Phys. Rev. B 12, 2361 (1975).
7. P. Das and D. K. Ferry, Solid-State Electron. 19, 851 (1976).
8. B. Gelmont, K. Kim, and M. Shur, J. Appl. Phys. 74, 1818 (1993).
9. N. S. Mansour, K. W. Kim, and M. A. Littlejohn, J. Appl. Phys. 77, 2834 (1995).
10. J. Kolník, I. H. Oǧuzman, K. F. Brennan, R. Wang, P. P. Ruden, and Y. Wang, J. Appl. Phys. 78, 1033 (1995).
11. M. Shur, B. Gelmont, and M. A. Khan, J. Electron. Mater. 25, 777 (1996).
12. S. Krishnamurthy, M. van Schilfgaarde, A. Sher, and A.-B. Chen, Appl. Phys. Lett. 71, 1999 (1997).
13. U. V. Bhapkar and M. S. Shur, J. Appl. Phys. 82, 1649 (1997).
14. J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand, and K. F. Brennan, J. Appl. Phys. 83, 4777 (1998).
15. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, J. Appl. Phys. 83, 826 (1998).
16. S. K. O'Leary, B. E. Foutz, M. S. Shur, L. F. Eastman, and U. V. Bhapkar, Mater. Res. Soc. Symp. Proc. 482, 845 (1998).
17. J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand, and K. F. Brennan, J. Appl. Phys. 83, 1446 (1998).
18. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, Solid State Commun. 105, 621 (1998).
19. J. D. Albrecht, R. Wang, P. P. Ruden, M. Farahmand, E. Bellotti, and K. F. Brennan, Mater. Res. Soc. Symp. Proc. 482, 845 (1998).
20. M. S. Krishnan, N. Goldsman, and A. Christou, J. Appl. Phys. 83, 5896 (1998).
21. R. Oberhuber, G. Zandler, and P. Vogl, Appl. Phys. Lett. 73, 818 (1998).
22. N. A. Zakhleniuk, C. R. Bennet, B. K. Ridley, and M. Babiker, Appl. Phys. Lett. 73, 2485 (1998).
23. J. G. Ruch, IEEE Trans. Electron Devices 19, 652 (1972).
24. M. S. Shur and L. F. Eastman, IEEE Trans. Electron Devices 26, 1677 (1979).
25. M. Heiblum, M. I. Nathan, D. C. Thomas, and C. M. Knoedler, Phys. Rev. Lett. 55, 2200 (1985).
26. A. Palevski, M. Heiblum, C. P. Umbach, C. M. Knoedler, A. N. Broers, and R. H. Koch, Phys. Rev. Lett. 62, 1776 (1989).
27. A. Palevski, C. P. Umbach, and M. Heiblum, Appl. Phys. Lett. 55, 1421 (1989).
28. A. Yacoby, U. Sivan, C. P. Umbach, and J. M. Hong, Phys. Rev. Lett. 66, 1938 (1991).
29. B. E. Foutz, L. F. Eastman, U. V. Bhapkar, and M. S. Shur, Appl. Phys. Lett. 70, 2849 (1997).
30. In the Kane model (see for example Ref.
31. g denote the free electron mass and the energy gap, respectively.
32. W. Fawcett, A. D. Boardman, and S. Swain, J. Phys. Chem. Solids 31, 1963 (1970).
33. P. Lugli and D. K. Ferry, IEEE Trans. Electron Devices 32, 2431 (1985).
34. H. Brooks, in Advances in Electronics and Electron Physics, edited by L. Marton (Academic, New York, 1955) Vol. 7, p. 85; H. Brooks and C. Herring, Phys. Rev. 83, 879 (1951).
35. H. Brooks, in Advances in Electronics and Electron Physics, edited by L. Marton (Academic, New York, 1955) Vol. 7, p. 85; H. Brooks and C. Herring, Phys. Rev. 83, 879 (1951).
36. V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
37. l were taken from Ref. 34.
38. 2.
39. A. Bykhovski, B. Gelmont, M. Shur, and A. Khan, J. Appl. Phys. 77, 1616 (1995).
40. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, Appl. Phys. Lett. 68, 818 (1996).
41. J. G. Gualtieri, J. A. Kosinski, and A. Ballato, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 41, 53 (1994).
42. H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).
43. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
44. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 44, 292 (1973).
45. 9 eV/cm. This selection is on the same order of magnitude as that made by Littlejohn et al. in their treatment of GaAs (Ref. 49).
46. The intervalley phonon energies are set equal to the optical phonon energy, a relationship which holds approximately for GaAs, see for example Ref. 49.
47. W. R. L. Lambrecht and B. Segall, in Properties of Group III Nitrides, EMIS Datareviews Series, No. 11, edited by J. H. Edgar (Inspec, London, 1994), Chap. 4.
48. For the sake of consistency, intervalley separations and the location of the upper valley minimum, which determine the degeneracy, were taken from Lambrecht and Segall (Ref. 45) for all three materials.
49. This selection of upper conduction band effective mass is larger than that found in other work. While this will lower the velocities slightly at large fields, it has no effect at low fields.
50. To determine the nonparabolicity coefficient a we applied the Kane model to the Γ valley minimum. All other valleys were assumed to be strictly parabolic in form. That is, within the framework of the Kane model, α =0 for all upper conduction band valleys.
51. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, J. Appl. Phys. 48, 4587 (1977).
52. J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
53. W. T. Masselink and T. K. Kuech, J. Electron. Mater. 18, 579 (1989).
54. M. Shur, Electron. Lett. 12, 615 (1976).
55. B. Carnez, A. Cappy, A. Kasznski, E. Constant, and G. Salmer, J. Appl. Phys. 51, 784 (1980).
56. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, Mater. Res. Soc. Symp. Proc. 512, 555 (1998).
57. K. Seeger, Semiconductor Physics (Springer, New York, 1985), pp. 173-174.
58. A survey of AlGaN/GaN HFET performance results and a complete set of references is currently being maintained at the web site http:// iiiv.tn.cornell.edu/www/foutz/ganhfet.html. Figure 7 includes data up to July 1998.
59. M. A. Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm, and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995).
60. M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, B. T. Dermott, and J. A. Higgins, IEEE Electron Device Lett. 17, 325 (1996).
61. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, IEEE Electron Device Lett. 17, 584 (1996).
62. Q. Chen, R. Gaska, M. A. Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman, Electron. Lett. 33, 637 (1997).
63. J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, IEEE Electron Device Lett. 18, 141 (1997).
64. Y.-F. Wu et al., IEEE Electron Device Lett. 18, 438 (1997).
65. Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, and U. K. Mishra, IEEE Electron Device Lett. 19, 50 (1998).
66. A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, and I. Adesida, IEEE Electron Device Lett. 19, 54 (1998).
67. K. K. Chu, J. A. Smart, J. R. Shealy, and L. F. Eastman, Proc. Electrochem. Soc. 98-12, 46 (1998).