Comparison between wurtzite phase and zincblende phase GaN MESFET's using a full band monte

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 493-497

  Simulation, Carlo ^a   Farahmand, Maziar ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Gan; Mesfet's; Monte carlo methods; Semiconductor device breakdown

Indexed keywords

WURTZITE PHASE; ZINCBLENDE PHASE;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

MESFET DEVICES;

EID: 0033884713     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824713     Document Type: Article

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