CLASSICAL VERSUS QUANTUM MECHANICAL CALCULATION OF THE ELECTRON DISTRIBUTION AT THE N-ALGAAS/GAAS HETEROINTERFACE.

IEEE Transactions on Electron Devices

Volumn ED-33, Issue 1, 1986, Pages 154-156

  Yoshida, Jiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - TRANSPORT PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES - PERFORMANCE;

CHANNEL ELECTRONS; CHARGE CONTROL QUANTUM MECHANICAL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT);

TRANSISTORS;

EID: 0022520568     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/t-ed.1986.22453     Document Type: Article

References (9)