Monte Carlo simulation for electron transport in MESFET's including realistic band structure of GaAs

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 454-456

  Ando, Yuji ^a   Contrata, Walter ^a   Hori, Yasuko ^a   Samoto, Norihiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; IONIZATION OF SOLIDS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE;

ANALYTICAL BAND MONTE CARLO (ABMC) SIMULATION; FULL BAND MONTE CARLO (FBMC) SIMULATOR;

MESFET DEVICES;

EID: 0032595850     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784450     Document Type: Article

References (15)

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