Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part I Homogeneous Transport

IEEE Transactions on Electron Devices

Volumn 38, Issue 3, 1991, Pages 634-649

  Fischetti, Massimo V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS--TRANSPORT PROPERTIES; MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS;

BAND STRUCTURE EFFECTS; DIAMOND/ZINC BLENDE SEMICONDUCTORS; HOMOGENEOUS TRANSPORT; INTERVALLEY DEFORMATION POTENTIALS; MONTE CARLO SIMULATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0026116329     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75176     Document Type: Article

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