Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1319-1325

  Farahmand, Maziar ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ZINCBLENDE;

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM COMPOUNDS;

MESFET DEVICES;

EID: 0032625439     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772471     Document Type: Article

References (38)

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