Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 975-983

  Lorenzini, Martino ^a   Vissarion, Radu ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; MOS DEVICES; NUMERICAL ANALYSIS; SEMICONDUCTOR STORAGE;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM);

PROM;

EID: 0032687955     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760406     Document Type: Article

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