An indirect interband tunneling formulation for an arbitrary electric field direction in semiconductors

Solid State Electronics

Volumn 38, Issue 5, 1995, Pages 1017-1023

  Tanaka, Sumio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRONS; LEAKAGE CURRENTS; PERTURBATION TECHNIQUES; PHONONS; PROBABILITY; SURFACES; VECTORS;

CONDUCTION BAND; INDIRECT INTERBAND TUNNELING THEORY; MOMENTUM CONSERVATION; VALENCE BAND; WANNIER EQUATION;

MOSFET DEVICES;

EID: 0029309911     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)98670-X     Document Type: Article

References (20)

1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit