Ultra-thin silicon dioxide leakage current and scaling limit

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 1992-June, Issue , 1992, Pages 18-19

  Schucgrqf, K F ^a   Kin, C C ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICA; SILICON OXIDES;

CLOSED-FORM EXPRESSION; DIRECT TUNNELING; ELECTRON WAVE INTERFERENCE; INSULATOR LAYER; POLYSILICON DEPLETION; POWER SUPPLY VOLTAGE; SCALING LIMITS; ULTRATHIN SILICON;

VLSI CIRCUITS;

EID: 84949585169     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1992.200622     Document Type: Conference Paper

References (5)

1. S.J. Wang, I.C. Chen, and M L. Tigclaar, "Effccts of Poly Depletion on the Estimate of Thin Dielcctric Lifetime, " IEEE Electron Device Letters, pp.617-619, 1991.
2. E. Roscnbaum, R. Moazzami, and C. Hu, "Implications of Waveform and Thickncss dependence of Si02 Breakdown on Accelcrated Testing, " Int. Symposium VLSI TSA, pp.214-218, 1991.
3. K.H. Gundlach, "Zur Bercchnung des Tunnclstroms durch cine Trapeziocrmige PoteiUialslulc, " Solid State Electronics, pp.949-957, 1966.
4. C.N. Berglund, and R.J. Powell, "Photoinjcction into Sio2: Election Scattering in the Image Force Potential Well, " Journal Applied Physics, pp.573-579, 1971.
5. J R. Moazami, and C. hu, "Projecting Gate Oxide Reliability and Optimizing Reliability Screcns, " IEEE Transactions Electron Devices, pp. 1643-1650, 1985.