A New Recombination Model for Device Simulation Including Tunneling

IEEE Transactions on Electron Devices

Volumn 39, Issue 2, 1992, Pages 331-338

  Hurkx, G A M ^a   Klaassen, D B M ^a   Knuvers, M P G ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; TUNNELING;

DEVICE SIMULATION; RECOMBINATION MODELS;

SEMICONDUCTOR DEVICES;

EID: 0026819795     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.121690     Document Type: Article

References (18)

1. E. O. Kane, “Zener tunneling in semiconductors,” J. Phys. Chem. Solids, vol. 12, pp. 181–188, 1959.
2. A. G. Chynoweth, W. L. Feldman, and R. A. Logan, “Excess tunnel current in silicon Esaki functions,” Phys. Rev., vol. 121, no. 3, pp. 684–694, 1961.
3. J. A. Del Alamo and R. M. Swanson, “Forward-bias tunneling: A limitation to bipolar device scaling,” IEEE Electron Device Lett., vol. EDL-7, no. 11, pp. 629–631, 1986; also in Proc. 18th Conf. on Solid State Devices and Materials (Tokyo, Japan), 1986, pp. 283—286.
4. G. A. M. Hurkx, D. B. M. Klaassen, M. P. G. Knuvers, and F. G. O’Hara, “A new recombination model describing heavy-doping effects and low-temperature behaviour,” in Proc. Int. Electron Device Meeting (Washington, DC), 1989, pp. 307–310.
5. H. Schaber, J. Bieger, B. Benna, and T. Meister, “Vertical scaling considerations for polysilicon-emitter bipolar transistors,” in Proc. European Solid-State Device Res. Conf. (Bologna, Italy), 1987, pp. 365–368.
6. P. F. Lu, T.C. Chen, and M. J. Saccamango, “Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter,” IEEE Electron Device Lett., vol. 10, no. 5, 232–235, 1989.
7. J. C. Sturm, E. J. Prinz, P. V. Schwartz, P. M. Garone, and Z. Matutinovic, “Growth and transistor applications of Si1-xGEx structures by rapid thermal chemical vapor deposition,” in Proc. 37th Nat. American Vacuum Soc. Symp (Toronto, Ont., Canada), 1990, pp. 5–10.
8. G. A. M. Hurkx, F. G. O’Hara, and M. P. G. Knuvers, “Modeling forward-biased tunnelling,” in Proc. European Solid-State Device Res. Conf. (Berlin, Germany), 1989, pp. 793–896.
9. A. G. Milnes, Deep Impurities in Semiconductors. New York: Wiley, 1973.
10. G. Vincent, A. Chantre, and D. Bois, “Electric field effect on the thermal emission of traps in semiconductor junctions,” J. Appl. Phys., vol. 50, no. 8, pp. 5484–5487, 1979.
11. L. I. Schiff, Quantum Mechanics. Auckland, New Zealand: McGraw-Hill, 1968, pp. 268–279.
12. L. V. Keldysh, “Behavior of non-metallic crystals in strong electric fields,” Sov. Phys.—JETP, vol. 33, no. 4, pp. 763–770, 1958.
13. L. V. Keldysh, “Influence of the lattice vibrations of a crystal on the production of electron-hole pairs in strong electric fields,” Sov. Phys.—JETP, vol. 34, no. 4, pp. 665–668, 1958.
14. E. O. Kane, Theory of tunneling, J. Appl. Phys., vol. 32, no. 1, pp. 83–89, 1961.
15. G. A. M. Hurkx, “On the modelling of tunnelling currents in reverse-biased p-n junctions,” Solid-State Electron., vol. 32, no. 8, pp. 665–668, 1989.
16. H. C. de Graaff and F. M. Klaassen, Compact Transistor Modelling for Circuit Design. Vienna, Austria: Springer, 1990.
17. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 98.
18. M. Abramowitz and I. A. Stegun, Handbook of Mathematical Functions. New York: Dover, 1970, p. 299.