Theory of the drain leakage current in silicon MOSFETs

Solid State Electronics

Volumn 38, Issue 3, 1995, Pages 683-691

  Tanaka, Sumio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC FIELDS; ELECTROSTATICS; FORECASTING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

ELECTROSTATIC POTENTIAL; INTERBAND DEFORMATION POTENTIAL; INTERBAND TUNNELING THEORY; POISSON EQUATION; SURFACE DEPLETION LAYER;

MOSFET DEVICES;

EID: 0029276083     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00134-2     Document Type: Article

References (29)

1. Zener tunneling in semiconductors
2. Electron Mobility in Ge, Si, and GaP