Recent advances in device simulation using standard transport models

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 223-237

  Baccarani, G ^a,c,d   Rudan, M ^a,e,f   Lorenzini, M ^a   Sala, C ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c IEEE   (Italy)

^d Academy of Sciences   (Italy)

^e Academy of Sciences ^*

^f IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Electron Energy Distribution Function; Flash EEPROM Cell; Fowler Nordheim Tunneling; Hot Carrier Injection; Interpoly Capacitance; Semiconductor Device Simulation

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRON TUNNELING; ELECTRONS; GATES (TRANSISTOR); HOT CARRIERS; MATHEMATICAL MODELS;

DISTRIBUTION FUNCTIONS;

SEMICONDUCTOR DEVICES;

EID: 0031645687     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/48951     Document Type: Article

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