Complete Transient Simulation of Flash EEPROM Devices

IEEE Transactions on Electron Devices

Volumn 39, Issue 12, 1992, Pages 2750-2757

  Keeney, Stephen ^a   Bez, Roberto ^b   Cantarelli, Daniele ^b   Piccinini, Francesco ^b   Mathewson, Man ^a   Ravazzi, Leonardo ^b   Lombardi, Claudio ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; SEMICONDUCTING SILICON;

BAND TO BAND TUNNLEING; EEPROMS; FLASH EEPROMS; FOWLER-NORDHEIM TUNNELING; HOT ELECTRON INJECTION; NONVOLATILE MEMORIES; TRANSIENT SIMULATION;

PROM;

EID: 0026972636     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.168729     Document Type: Article

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