The Impact of Three-Dimensional Effects on EEPROM Cell Performance

IEEE Transactions on Electron Devices

Volumn 39, Issue 4, 1992, Pages 843-850

  Linton, Thomas D ^a   Blakey, Peter A ^b   Neikirk, Dean P ^c  

^a MasPar Computer Corporation ^*  (United States)

^b Silvaco Data Systems Inc   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MAGNETISM--PARAMAGNETISM;

EEPROM; ELECTRICALLY ERASABLE MEMORY;

DATA STORAGE, DIGITAL;

EID: 0026852752     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.127474     Document Type: Article

References (7)

1. A. Kolodny, S. T. K. Nieh, B. Eitan, and J. Shappir, “Analysis and modeling of floating-gate EEPROM cells,” IEEE Trans. Electron Devices, vol. ED-33, no. 6, pp. 835–844, June 1986.
2. J. Lee and V. K. Dham, “Design considerations for scaling FLOTOX EEPROM cell,” in IEDM Tech. Dig., 1983, pp. 589–592.
3. P. I. Suciu, B. P. Cox, D. D. Rinerson, and S. F. Cagnina, “Cell model for EEPROM floating-gate memories,” in IEDM Tech. Dig., 1982, pp. 737–740.
4. T. D. Linton, Jr., and P. A. Blakey, “A fast, general three-dimensional device simulator and its application in a submicron EPROM design study,” IEEE Trans. Computer-Aided Des., vol. 8, no. 5, pp. 508–515, May 1989.
5. W. S. Johnson, G. Perlegos, A. Renninger, G. Kuhn, and T. R. Ranganath, “A 16 Kb electrically erasable nonvolatile memory,” in Dig. Tech. Papers IEEE Int. Solid-State Circuits Conf., Feb. 1980, pp. 152–153.
6. R. H. Fowler and L. Nordheim, “Electron emission in intense electric fields,” Proc. Roy. Soc. London, Ser. A., vol. 119, pp. 173–179, 1928.
7. Y. D. Linton, Jr., “Analysis of three-dimensional effects in advanced VLSI devices,” Ph.D. dissertation. The University of Texas at Austin, 1989.