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Volumn 38, Issue 6, 1991, Pages 1425-1431

Theory of Band-to-Band Tunneling Under Nonuniform Electric Fields for Subbreakdown Leakage Currents

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS;

EID: 0026169346     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81635     Document Type: Article
Times cited : (31)

References (14)
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    • T. Y. Chan, J. Chen, P. K. Ko, and C. Hu, “The impact of gate-induced drain leakage current on MOSFET scaling,” in IEDM Tech. Dig., 1987, p. 718.
    • (1987) IEDM Tech. Dig. , pp. 718
    • Chan, T.Y.1    Chen, J.2    Ko, P.K.3    Hu, C.4
  • 3
    • 0023553867 scopus 로고
    • Corner-field induced drain leakage in thin oxide MOSFETS
    • C. Chang and J. Lien, “Corner-field induced drain leakage in thin oxide MOSFETS,” in IEDM Tech. Dig., 1987, p. 714.
    • (1987) IEDM Tech. Dig. , pp. 714
    • Chang, C.1    Lien, J.2
  • 5
    • 0023535394 scopus 로고
    • A band-to-band tunneling effect in the trench transistor cell
    • S. Banerjee, J. Coleman, B. Richardson, and A. Shah, “A band-to-band tunneling effect in the trench transistor cell,” in Proc. VLSI Symp., 1987, p. 97.
    • (1987) Proc. VLSI Symp. , pp. 97
    • Banerjee, S.1    Coleman, J.2    Richardson, B.3    Shah, A.4
  • 7
    • 0037719673 scopus 로고
    • Behavior of non-metallic crystals in strong electric fields
    • L. V. Keldysh, “Behavior of non-metallic crystals in strong electric fields,” Sov. Phys.―JETP, vol. 6, p. 763, 1958.
    • (1958) Sov. Phys.―JETP , vol.6 , pp. 763
    • Keldysh, L.V.1
  • 8
    • 0000583839 scopus 로고
    • Influence of the lattice vibrations of a crystal on the production of electron-hole pairs in a strong electric field
    • —, “Influence of the lattice vibrations of a crystal on the production of electron-hole pairs in a strong electric field,” Sov. Phys.—JETP, vol. 7, p. 665, 1958.
    • (1958) Sov. Phys.—JETP , vol.7 , pp. 665
  • 9
    • 50549156338 scopus 로고
    • Zener tunneling in semiconductors
    • E. O. Kane, “Zener tunneling in semiconductors,” J. Phys. Chem. Solids, vol. 12, 181, 1959.
    • (1959) J. Phys. Chem. Solids , vol.12 , Issue.181
    • Kane, E.O.1
  • 10
    • 0002930518 scopus 로고
    • Theory of tunneling
    • —, “Theory of tunneling,” J. Appl. Phys., vol. 32, p. 83, 1961.
    • (1961) J. Appl. Phys. , vol.32 , pp. 83
  • 11
    • 0024870701 scopus 로고
    • Drain leakage current characteristics due to the band-to-band tunneling in LDD MOS devices
    • K. Kurimoto, Y. Odake, and S. Odanaka, “Drain leakage current characteristics due to the band-to-band tunneling in LDD MOS devices,” in IEDM Tech. Dig., 1989, p. 621.
    • (1989) IEDM Tech. Dig. , pp. 621
    • Kurimoto, K.1    Odake, Y.2    Odanaka, S.3
  • 12
    • 0022062221 scopus 로고
    • Theory of interband tunneling in semiconductors
    • P. K. Chakraborty and J. C. Biswas, “Theory of interband tunneling in semiconductors,” Solid-State Electron., vol. 28, p. 493, 1985.
    • (1985) Solid-State Electron. , vol.28 , pp. 493
    • Chakraborty, P.K.1    Biswas, J.C.2
  • 13
    • 0024870390 scopus 로고
    • A new band-to-band model for accurate device simulations of Si MOSFETS
    • M. Takayanagi, S. Iwabuchi, T. Kobori, and T. Wada, “A new band-to-band model for accurate device simulations of Si MOSFETS,” in IEDM Tech. Dig., 1989, p. 311.
    • (1989) IEDM Tech. Dig. , pp. 311
    • Takayanagi, M.1    Iwabuchi, S.2    Kobori, T.3    Wada, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.