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Journal of Applied Physics

Volumn 59, Issue 11, 1986, Pages 3881-3889

High-field tunneling calculations in metal-oxide-silicon capacitors incorporating the perimeter effect

(2) Hook, Terence B a Ma, T P a

a YALE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549098844 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.336730 Document Type: Article

Times cited : (4)

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