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Volumn , Issue , 1992, Pages 135-140

Two-dinlensional numerical modeling of interband tunneling accounting for nonuniform electric field

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; INTEGRATED CIRCUITS; MOSFET DEVICES;

EID: 84944986313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUPAD.1992.674093     Document Type: Conference Paper
Times cited : (4)

References (13)
  • 1
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    • (Honolulu, Hawaii), June
    • Takashi Hori, "Drain-Structure Design for Reduced Band-to-Band and Band-to-Defect. Tunneling Leakage", Proceedings Symposium on VLSI Technology (Honolulu, Hawaii), June, 1990, pp. 69-70.
    • (1990) Proceedings Symposium on VLSI Technology , pp. 69-70
    • Hori, T.1
  • 2
    • 0024895151 scopus 로고
    • Band-to-band tunneling induced substrate hot-electron (bbtshe) injection: A new programming mechanism for nonvolatile memory devices
    • (Washington, D.C.), December
    • I. C. Chen, C. Kaya, and j. Patcrson, "Band-to-Band Tunneling Induced Substrate Hot-Electron (BBTSHE) Injection: A New Programming Mechanism for Nonvolatile memory Devices", in IEDM Tech. Dig. (Washington, D.C.), December, 1989, pp. 263-266.
    • (1989) IEDM Tech. Dig. , pp. 263-266
    • Chen, I.C.1    Kaya, C.2    Patcrson, J.3
  • 4
    • 0026169346 scopus 로고
    • Theory of band-to-band tunneling under nonuniform elcctric fields for sub breakdown leakage currents
    • June
    • M. Takayanagi, S. Iwabuchi, "Theory of Band-to-Band Tunneling Under Nonuniform Elcctric Fields for Sub breakdown Leakage Currents", IEEE Trans. Electron Devices, vol. 38, pp. 1425-1431, June 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1425-1431
    • Takayanagi, M.1    Iwabuchi, S.2
  • 5
    • 0025207780 scopus 로고
    • An accurate model of subbreak-down due to band-to-band tunneling and some applications
    • January
    • T. En doll, R. Shirota, M. Momodomi, F. Masuoka, "An Accurate Model of Subbreak-down Due to Band-to-Band Tunneling and Some Applications", IEEE Trans. Electron Devices, vol. 37, pp. 290-296, January 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 290-296
    • Doll, T.E.1    Shirota, R.2    Momodomi, M.3    Masuoka, F.4
  • 7
    • 50549156338 scopus 로고
    • Zener tunneling in semiconductors
    • E. O. Kane, "Zener tunneling in semiconductors", Journal Phys. Chem. Solids, vol. 12, pp. 181-188, 1959.
    • (1959) Journal Phys. Chem. Solids , vol.12 , pp. 181-188
    • Kane, E.O.1
  • 8
    • 0022062221 scopus 로고
    • Theory of interband tunneling in semiconductors
    • P. K. Chakraborty, J. C. Biswas, "Theory of interband tunneling in semiconductors", Solid-State Electronics, vol. 28, no. 5, pp. 493-497, 1985.
    • (1985) Solid-State Electronics , vol.28 , Issue.5 , pp. 493-497
    • Chakraborty, P.K.1    Biswas, J.C.2
  • 9
    • 1542647686 scopus 로고
    • Theory of tunneling across semiconductor junctions
    • February
    • Ralph T. Shuey, "Theory of Tunneling Across Semiconductor Junctions", Physical Review, vol. 137, pp. 1268-1277, February 1965.
    • (1965) Physical Review , vol.137 , pp. 1268-1277
    • Shuey, R.T.1
  • 10
    • 0025665625 scopus 로고
    • The combined effects of band-to-band tunneling and impact ionization in the off regime of an ldd mos-fet
    • December
    • M. Orlowski, S. W. Sun, P. Blakey and R. Subrahmanyan, "The Combined Effects of Band-to-Band Tunneling and Impact Ionization in the Off Regime of an LDD MOS-FET", IEEE Electron Device Letters, vol. 11, pp. 593-595, December 1990.
    • (1990) IEEE Electron Device Letters , vol.11 , pp. 593-595
    • Orlowski, M.1    Sun, S.W.2    Blakey, P.3    Subrahmanyan, R.4
  • 11
    • 0026376672 scopus 로고
    • Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide mosfets
    • T. Nedev, A. Asenov and E. Stefanov, "Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs", Solid-State Electronics, vol. 34, no. 12, pp. 1401-1408, 1991.
    • (1991) Solid-State Electronics , vol.34 , Issue.12 , pp. 1401-1408
    • Nedev, T.1    Asenov, A.2    Stefanov, E.3
  • 12
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    • Theory of tunneling and its dependence on longitudinal magnetic field
    • May
    • P. N. Argvres, "Theory of Tunneling and its Dependence on Longitudinal Magnetic Field", Physical Review, vol. 126, pp. 1386-1393, May 1962.
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    • Argvres, P.N.1
  • 13
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    • January
    • E. O. Kane, "Theory of Tunneling", Journal of Applied Physics, vol. 32, pp. 83-91, January 1961.
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    • Kane, E.O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.