Experimental Transient Analysis of the Tunnel Current in EEPROM Cells

IEEE Transactions on Electron Devices

Volumn 37, Issue 4, 1990, Pages 1081-1086

  Bez, Roberto ^a   Cantarelli, Daniele ^a   Cappelletti, Paolo ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTOR DEVICES--TUNNELING;

TRANSIENT ANALYSIS;

DATA STORAGE, SEMICONDUCTOR;

EID: 0025416877     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.52445     Document Type: Article

References (13)

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