Analysis of interface roughness's effect on metal-oxide-semiconductor Fowler-Nordheim tunneling behavior using atomic force microscope images

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 790-796

  Lin, Heng Chih ^a   Ying, Ji Feng ^a   Yamanaka, Toshiyaki ^a,b   Fang, Simon J ^a   Helms, C R ^a  

^a Stanford University   (United States)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008604712     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580709     Document Type: Article

References (8)

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4. T. Nakanishi, S. Kishii, A. Ohsawa, and K. Honda, 1989 International Symposium on VLSI Technology Meeting, Systems and Applications, Proceedings of Technical Papers 1989, p. 79.
5. Q. Liu, L. Spanos, C. Zhao, and E. A. Irene, J. Vac. Sci. Technol. A 13, 1977 (1995).
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7. S. Zafar, Q. Liu, and E. A. Irene, J. Vac. Sci. Technol. A 13, 47 (1995).
8. S. J. Fang, W. Chen, T. Yamanaka, and C. R. Helms, Appl. Phys. Lett. 68, 2837 (1996).