Characterization of ultrathin SiO2 films grown by rapid thermal oxidation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1394-1398

  Hu, Y Z ^a   Tay, S P ^a   Wasserman, Y ^a   Zhao, C Y ^b   Hebert, K J ^b   Irene, E A ^b  

^a A G Associates   (United States)

^b University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; BEST FIT; BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION; DEVICE FEATURES; DIELECTRIC FORMATION; DYNAMIC RANDOM ACCESS MEMORY; FOWLER-NORDHEIM TUNNELING; GATE OXIDE; HIGH-PERFORMANCE MICROPROCESSORS; INTERFACE LAYER; LATERAL DIFFUSION; MULTIPLE WAVELENGTHS; OPTICAL MODELS; OXIDE THICKNESS; PHOTON ENERGY RANGE; RAPID THERMAL OXIDATION; SINGLE WAVELENGTH ELLIPSOMETRIES; TIME-TEMPERATURE; TWO LAYER MODEL; ULTRA-THIN; VERTICAL DIFFUSION;

GATE DIELECTRICS; GATES (TRANSISTOR); MOS DEVICES; OXIDATION; RANDOM ACCESS STORAGE; REGENERATORS; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

ULTRATHIN FILMS;

EID: 21744454072     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580548     Document Type: Article

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