Valence band edge of ultra-thin silicon oxide near the interface

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 546-549

  Nohira, H ^a   Omura, A ^a   Katayama, M ^b   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b NONE

Author keywords

SiO 2; SiO 2 Si(100) interface; Transition layer; Valence band discontinuity; Valence band structure; XPS

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); OXIDATION; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

VALENCE BAND DISCONTINUITY;

SILICA;

EID: 0031685719     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00568-0     Document Type: Article

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