Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO2/Si interface

Solid State Phenomena

Volumn 65-66, Issue , 1999, Pages 241-244

  Nohira, H ^a   Takahashi, K ^a   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Energy loss spectroscopy; O1s photoelectron; Silicon oxide; Transition layer; XPS

Indexed keywords

ENERGY DISSIPATION; ENERGY GAP; INELASTIC SCATTERING; OXIDE FILMS; PHOTOELECTRONS; PHOTOIONIZATION; PHOTONS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY; HETEROJUNCTIONS; OXIDES;

DRY OXYGEN; ENERGY RANGES; ENERGY-LOSS SPECTROSCOPY; SI (1 1 1); SI(100) SURFACE; STRUCTURAL TRANSITIONS; TRANSITION LAYERS; ULTRATHIN SILICON;

SILICON OXIDES; SILICON WAFERS;

PHOTOELECTRONS;

EID: 0032784857     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.65-66.241     Document Type: Conference Paper

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