Si/SiO2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering

Applied Physics Letters

Volumn 70, Issue 11, 1997, Pages 1414-1416

  Cundiff, S T ^a   Knox, W H ^a   Baumann, F H ^a   Evans Lutterodt, K W ^a   Tang, M T ^a,c   Green, M L ^a   Van Driel, H M ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FOURIER TRANSFORMS; OPTICAL PROPERTIES; OXIDATION; OXIDES; SECOND HARMONIC GENERATION; SILICA; SILICON WAFERS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

INTERFACE ROUGHNESS; SURFACE SECOND HARMONIC GENERATION; X RAY SCATTERING MEASUREMENTS;

INTERFACES (MATERIALS);

EID: 0031101304     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118592     Document Type: Review

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