X-ray photoelectron study of gate oxides and nitrides

Solid State Phenomena

Volumn 65-66, Issue , 1999, Pages 257-260

  Opila, R L ^a   Chang, J P ^a   Du, M ^a   Bevk, J ^a   Ma, Y ^a   Weldon, M ^a   Chabal, Y ^a   Gurevich, A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Rapid thermal oxidation; Silicon nitride; X ray photoelectron spectroscopy

Indexed keywords

GATES (TRANSISTOR); NITRIDES; PHOTONS; RAPID THERMAL PROCESSING; SILICON NITRIDE; SILICON OXIDES; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY; ANNEALING; CRYSTAL DEFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; NITROGEN; NITROGEN OXIDES; OXIDATION; SEMICONDUCTOR GROWTH; SILICA; SURFACE CLEANING;

CHEMICAL STATE; ELECTRICAL DEFECTS; ELEMENTAL COMPOSITIONS; ESCAPE DEPTH; NON-STOICHIOMETRIC; RAPID THERMAL OXIDATION; THERMALLY GROWN OXIDE; X-RAY PHOTOELECTRONS;

PHOTOELECTRONS; SEMICONDUCTING SILICON COMPOUNDS;

RAPID THERMAL OXIDATION;

EID: 0032760949     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.65-66.257     Document Type: Conference Paper

References (5)

1. G. Hollinger and F. J. Himpscl, Appl. Phys. Lett. 44, 93 (1984).
2. M. M. Banaszak Holl and F. R. McFeely, Phys. Rev. Lett., 71, 2441 (1993).
3. M. M. Banaszak Holl, S. Lee, and F. R. McFeely, Appl. Phys. Rev. Lett., 75, 1097 (1994).
4. A. Pasquerello, M. S. Hybertsen, R. Car, Phys. Rev. B, 53, 10942 (1996).
5. N. Layadi, V. M. Donnelly, and J.T. C. Lee, J. Appl. Phys., 81, 6738 (1997).