SiO 2 valence band near the SiO 2 /Si(111) interface

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 119-122

  Nohira, Hiroshi ^a   Hattori, Takeo ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Silicon dioxide; SiO 2 Si interface; Valence band discontinuity; Valence band formation; XPS

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; OXIDATION; SEMICONDUCTING SILICON; SILICA; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

VALENCE BAND DISCONTINUITY;

INTERFACES (MATERIALS);

EID: 0031548141     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80063-3     Document Type: Article

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