Structural nature of the Si/SiO2 interface through infrared spectroscopy

Applied Physics Letters

Volumn 68, Issue 22, 1996, Pages 3108-3110

  Devine, R A B ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000968790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116438     Document Type: Article

References (9)

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3. C. Martinet and R. A. B. Devine, J. Appl. Phys. AIP 77, 4343 (1995).
4. D. W. Berreman, Phys. Rev. 130, 2193 (1963).
5. 2, edited by R. A. B. Devine (Plenum, New York 1988) p. 297.
6. R. A. B. Devine, Trans. Mater. Res. Soc. Jpn. 8, 165 (1992).
7. A. Lehman, L. Schuman, and K. Hübner, Phys. Status Solidi B INS 117, 689 (1983).
8. G. Lucovsky, M. J. Manitini, J. K. Srivastava, and E. A. Irene, J. Vac. Sci. Technol. B AIP 5, 530 (1987).
9. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol. A AIP 4, 689 (1986).