A study of the radiation sensitivity of non-crystalline SiO2 films using spectroscopic elhpsometry

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2450-2457

  Mrstik, B J ^a,b   McMarr, P J ^a,c   Lawrence, R K ^b,c   Hughes, H L ^a,b,c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b URACOR/SFA   (United States)

^c SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DENSITY (SPECIFIC GRAVITY); ELECTRON TRAPS; ELLIPSOMETRY; HIGH TEMPERATURE EFFECTS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; X RAYS;

SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 0032318958     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736485     Document Type: Article

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