Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide

Journal of the Electrochemical Society

Volumn 127, Issue 6, 1980, Pages 1359-1365

  Aspnes, D E ^a   Theeten, J B ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

ellipsometry; interface; SiCk; silicon

Indexed keywords

EID: 56249140748     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129899     Document Type: Article

References (28)

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