Process optimization of radiation-hardened CMOS integrated circuits

IEEE Transactions on Nuclear Science

Volumn 22, Issue 6, 1975, Pages 2151-2156

  DerBenwlck, G F ^a   Gregory, B L ^a  

^a Sandla Laboratories ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001399549     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1975.4328096     Document Type: Article

References (18)

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4. K. M. Schlesier and P. E. Norris, “CMOS Hardening Techniques”, IEEE Trans. Nucl. Sci. NS-19, 275 (1972).
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7. A. S. Grove, Physics and Technology of Semiconductor Devices, John Wiley and Sons, Inc., 1967 (Chapter 2).
8. S. I. Raider, R. A. Gdula, and J. R. Petrak, “Nitrogen Reaction at a Silicon-Silicon Dioxide Interface”, Appl. Phys. Lett. 27, 150 (1975).
9. R. A. Burghard, B. l. Gregory, C. W. Gwyn and G. F. Derbenwick, “Process Dependence of Radiation Effects in CMOS Integrated Circuits”, Final Report, AFWL Contract 75-198, May 1975.
10. J. P. Mitchell, “Radiation-Induced Space-Charge Buildup in MOS Structures”, IEEE Trans. Elec. Dev. ED-14, 764 (1967).
11. E. H. Snow, A. S. Grove, and D. J. Fitzgerald, “Effects of Ionizing Radiation on Oxidized Silicon Surfaces and Planar Devices”, Proc. IEEE 55, 1168 (1967).
12. A. G. Holmes-Siedle, and K. H. Zaininger, “The Physics of Failure of MIS Devices Under Irradiation,”, IEEE Trans, on Reliability R-17, 34 (1968).
13. R. J. Powell and G. F. Derbenwick, “Vacuum Ultraviolet Radiation Effects in SiO2”, IEEE Trans. Nucl. Sci., NS-18, 99 (1971).
14. J. R. Brews, “Theory of the Carrier-Density Fluctuations in an IGFET Near Threshold”, J. Appl. Phys. 46, 2193 (1975); “Carrier Density Fluctuations and the IGFET Mobility Near Threshold”, J. Appl. Phys., 46, 2181 (1975).
15. R. C. Hughes, “Charge Carrier Transport Phenomena in Amorphous SiO2:Direct Measurement of the Drift Mobility and Lifetime”, Phys. Rev. Lett. 30, 1333 (1973).
16. J. R. Srour Jr., O. L. Curtis, and K. Y. Chiu, “Charge Transport Studies in SiO2:Processing Effects and Implications for Radiation Hardening”, IEEE Trans. Nucl. Sci. NS-21, 73 (1974).
17. J. N. Churchill, T. W. Collins, and Holmstrom, “Electron Irradiation Effects in MOS Systems”, IEEE Trans. Elec. Dev. ED-21, 768 (1974).
18. R. J. Maier and R. W. Tallon, This Journal.