메뉴 건너뛰기




Volumn 43, Issue 6 PART 1, 1996, Pages 2639-2645

Dependence of radiation induced buried oxide charge on silicon-on-insulator fabrication technology

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DOSIMETRY; ION IMPLANTATION; OXIDES; RADIATION EFFECTS; X RAYS;

EID: 0030370710     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556847     Document Type: Article
Times cited : (6)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.