SiO2/Si interfacial degradation and the role of oxygen interstitials

Journal de Physique III

Volumn 6, Issue 12, 1996, Pages 1569-1594

  Devine, R A B ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DIFFUSION IN SOLIDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

FLOAT ZONE SUBSTRATES; INFRARED ABSORPTION DATA; INTERSTITIALS DIFFUSION; OXYGEN VACANCY CENTRES; TEMPERATURE DEPENDENT SOLUBILITY LIMIT;

SEMICONDUCTOR DEVICES;

EID: 0030389386     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1996203     Document Type: Article

References (38)

1. Fleetwood D. M., Shaneyfelt M. R. and Schwank J. R., Estimating oxide-trap, interface-trap and border-trap charge densities in metal-oxide-semiconductor transistors, Appl. Phys. Lett. 64 (1994) 1965-1967 and references therein.
2. Derbenwick G. F. and Gregory B. L., Process optimization of radiation hardened CMOS integrated circuits, IEEE Trans. Nucl. Sci. NS 22 (1975) 2151-2156.
3. Hickmott T. W., Annealing of surface states in polycrystalline-silicon-gate capacitors, J. Appl. Phys. 48 (1977) 723-733.
4. 2, Sol. State Electronics 27 (1984) 709-719.
5. Aslam M., Singh R. and Balk P., Nature of electron and hole traps in MOS systems with poly-Si electrode, Phys. Stat. Sol. (a) 84 (1984) 659-668.
6. Aslam M., Common origin for electron and hole traps in MOS devices, IEEE Trans. Electron. Dev. ED 34 (1987) 2535-2539.
7. Stahlbush R. E. and Brown G. A., Bulk trap formation by high temperature annealing of buried thermal oxides, IEEE Trans. Nucl. Sci. NS 42 (1995) 1708-1716.
8. Fleetwood D. M. and Scofield J. H., Evidence that similar point defects cause 1/f noise and radiation-induced-hole-trapping in metal-oxide-semiconductor transistors, Phys. Rev. Letts. 64 (1990) 579-582.
9. 2 by high-temperature annealing, Appl. Phys. Lett. 49 (1986) 1525-1527.
10. 2 films on Si(100), J. Appl. Phys. 61 (1987) 4584-4588.
11. 2 on Si(100), J. Vac. Sci. Tech. A 5 (1987) 1559-1562.
12. 2/Si interface, Mat. Res. Soc. Symp. Proc. 105 (1988) 11-21.
13. 2 interface, J. Electrochem. Soc. Extended Abs. 309 (1989) 446.
14. 2/Si interface, Phys. Rev. Lett. 55 (1985) 2332.
15. 2, Appl. Phys. Lett. 54 (1989) 1427-1429.
16. 2 films in vacuum, Jpn. J. Appl. Phys. 32 (1993) L480-L483.
17. Tsoukalis D., Tsamis C. and Stoemenos J., Investigation of silicon interstitial reactions with insulating films using the silicon wafer bonding technique, Appl. Phys. Lett. 63 (1993) 3167-3169.
18. Mikkelsen Jr. J. C., Self-diffusivity of network oxygen in vitreous silica, Appl. Phys. Lett. 45 (1984) 1187-1189.
19. 2 interface, Appl. Phys. Lett. 59 (1991) 2424-2426.
20. 2 from silicon in ultrahigh vacuum, J. Appl. Phys. 61 (1987) 2894-2897.
21. 2, Phys. Rev. B 35 (1987) 8223.
22. 2 films, Appl. Phys. Lett. 46 (1985) 38-40.
23. Craven R. A., Oxygen precipitation in Czochralski silicon, Semiconductor Si 1981, H. R. Huff, R. J. Kriegler and Y. Takeishi, Eds. (Electrochemical Soc., 1981) pp. 254-271.
24. 2 precipitate strain relief in Czochralski Si: Self-interstitial emission versus prismatic dislocation loop punching, J. Appl. Phys. 72 (1992) 2192-2196.
25. Graff K., Precise evaluation of oxygen measurements on CZ silicon wafers, J. Electrochem. Soc. 130 (1983) 1378-1381.
26. 2, Sol. State Comms. 14 (1976) 226.
27. 2 thin films, Appl. Phys. Lett. 62 (1993) 3330-3332.
28. 2/Si structures, J. Appl. Phys. 77 (1995) 175-186.
29. 2 and its interfaces, S. T. Pantelides, Ed. (Pergamon, 1978) pp. 160-178.
30. Ning T. H., High field capture of electrons by Coulomb-attractive centers in silicon dioxide, J. Appl. Phys. 47 (1976) 3203-3208.
31. Krantz R. J., Aukerman L. W. and Zietlow T. C., Applied field and total dose dependence of trapped charge buildup in MOS devices, IEEE Trans. Nucl. Sci. NS 34 (1987) 1196-1201.
32. Bosomsworth D. R., Hayes W., Spray A. R. L. and Watkins G. D., Absorption of oxygen in Si in the near and far infra-red, Proc. Roy. Soc. (Lond) A 317 (1970) 133.
33. 2 films, in "The Physics of MOS Insulators", G. Lucovsky, S. T. Pantelides and F. L. Galeener, Eds. (Pergamon, New York, 1980) p. 92.
34. Stavola M., Patel J. R., Kimmerling L. C. and Freeland P. C., Diffusivity of oxygen in silicon at the donor formation temperature, Appl. Phys. Lett. 42 (1983) 73-75.
35. 2/Si structures, J. Appl. Phys. 79 (1996).
36. Messoloras S., Newman R. C., Stewart R. J. and Tucker J. H., Is enhanced interstitial oxygen diffusion necessary to explain the kinetics of precipitation in silicon at temperatures below 650°C?, Semicond. Sci. Technol. 2 (1987) 14-19.
37. Ahn K.-Y., Stengl R., Tan T. Y., Gösele U. and Smith P., Growth, shrinkage and stability of interfacial oxide layers between directly bonded silicon wafers, Appl. Phys. A 50 (1990) 85-94.
38. Ushiyama M., Ohji Y., Nishimoto T., Komori K., Kume H., Nakagawa S. and Tachi S., Nanometer structure of gate electrode/gate insulator interface and anomalous voltage deviation of tunneling current through submicron MOS devices, 22nd Sol. State Dev. Mater. Conf. Ext. Abstracts (1990) pp. 267-270.