The radiation response of capacitors fabricated on bonded silicon-on-insulator substrates

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2115-2123

  McMarr, P J ^a   Mrstik, B J ^b   Lawrence, R K ^c   Jernigan, G G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ARACOR/SFA   (United States)

^c SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CAPACITANCE MEASUREMENT; DENSITY (SPECIFIC GRAVITY); OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; VOLTAGE MEASUREMENT; X RAYS;

THERMAL OXIDE;

CAPACITORS;

EID: 0031337846     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659026     Document Type: Article

References (14)

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